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SK hynix

SK hynix
Photo by DeepMind / Unsplash

SK hynix presented the idea of 3D NAND flash memory with more than 300 layers at the ISSCC 2023 conference. The developers aim to increase the bandwidth of the chips from 164 Mbytes/s to 194 Mbytes/s.

The new 3D NAND increased the number of layers and reduced the spacing between them, leading to increased resistance of the wordline (WL) connecting the cells in the matrix row. If this growth is not compensated, the performance and energy efficiency will decrease.